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| Class |
Mon & Wed |
3:30pm - 4:45pm |
ChemNuc
(CHE, Bldg 090)
Room 2140 computer classroom |
| Instructor |
Gary W. Rubloff
main office A.V. Williams 2145 |
x52949 |
rubloff@isr.umd.edu |
| Office hours |
Mon & Wed before
class |
2:00pm - 3:00pm |
main office A.V. Williams 2145
(or by appt in
MSE office ChemNuc 2309, x50499) |
| Prerequisites |
Required:
permission of the instructor and ENES 230 (Introduction to Materials and
Their Applications) or equivalent
Recommended: ENMA 460 (Physics of Solid Materials) or equivalent |
| Textbook |
Silicon
VLSI Technology: Fundamentals, Practice and Modeling
James D. Plummer, Michael D. Deal, and Peter B. Griffin (Prentice-Hall) |
| Research projects |
Team
projects, 3-5 people each, comprising research investigations and/or
modeling and simulation of key materials and processes |
| Grading |
Homework
Class participation
Midterm exam
Research project
Final exam |
15%
15%
15%
30%
25% |
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DESCRIPTION
The course provides an
overview of the microprocessing - and indeed nanoprocessing - of materials as
used in the fabrication of ultrathin layers and structures of materials for use
in semiconductors and other devices based on thin film fabrication. Key
processes are explored with respect to their underlying chemistry and physics,
the relation of these processes to resulting materials properties and microscale/nanoscale
topography, the manufacturing equipment used to achieve success microprocessing,
and fundamental interactions between process steps which determine the
performance of micrstructures and nanostructures. Simulation exercises and
research projects provide an opportunity to explore key concepts in the course,
to develop useful modeling skills, and to actively pursue a research
question in a team setting. The student will (1) develop skills in
identifying, understanding, and exploiting fundamental mechanisms in
microprocesses, and (2) gain a meaningful perspective on how this understanding
can be used in industrial applications of microprocessing as employed in
technologies for silicon ULSI, compound semiconductors, optoelectronics,
displays, data storage, and microelectromechanical systems.
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