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US5290358: Apparatus for directional low pressure chemical vapor deposition (DLPCVD)

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Inventor(s): Rubloff; Gary W. , Waccabuc, NY
Hsieh; Julian J. , Bronx, NY

Applicant(s): International Business Machines Corporation, Armonk, NY


Issued/Filed Dates: March 1, 1994 / Sept. 30, 1992

Application Number: US1992000954633

IPC Class: C23C 016/00;

Class: 118/715; 118/720; 118/725; 427/248.1; 156/613; 437/090; 437/235; 437/237;

Field of Search: 118/720,725,715 427/248.1 156/613 437/100,235,237

Priority Number(s):
US1992000954633 Family


Abstract: System and method for controlling the thickness profile of deposited thin film layers over three-dimensional topography are disclosed, wherein low pressure chemical vapor deposition conditions are employed with the reactant beam collimated and chosen to impinge at a specific angle onto the surface, such that the reactive sticking coefficient sr with the deposition surface is <1. Compared with conventional approaches, this method permits new shapes of the deposited thin film layer to be achieved over topography (such as trenches), including (i) tapered rather than re-entrant shapes (i.e., thicker at bottom rather than at top), (ii) enhanced sidewall and/or bottom coverage of trench structures (cf. the top surface), (iii) voidless, seamless filling of trench or via structures even at high aspect ratio (depth/width), and (iv) asymmetric sidewall coverage.
Attorney, Agent, or Firm: Dowd; Thomas P.; Morris; Daniel P.;

Primary/Assistant Examiners: Chaudhuri; Olik; Paladugu; Ramamohan Rao

           

U.S. References:		   Show the 12 patents that reference this one
Patent Inventor   Issued   Title
US3092522* Knowles et al. 6 /1963  
US3908262 Stein 9 /1975 Process for the production of a two-phase charge shift arrangement for charge coupled devices
US3951708 Dean 4 /1976 Method of manufacturing a semiconductor device
US4211582 Horng et al. 7 /1980 Process for making large area isolation trenches utilizing a two-step selective etching technique
US4310567 Tabata et al. 1 /1982 Method for chemical vapor deposition
US4422888 Stutius 12 /1983 Method for successfully depositing doped II-VI epitaxial layers by organometallic chemical vapor deposition
US4477489 Yanai et al. 10 /1984 Method of making magnetic recording medium
US4525919 Fabian 7 /1985 Forming sub-micron electrodes by oblique deposition
US4617088 Nishiguchi et al. 10 /1986 Thermal head producing process
US4625678 Shioya et al. 12 /1986 Apparatus for plasma chemical vapor deposition
US4756793 Peek 7 /1988 Method of manufacturing a semiconductor device
US4788082 Schmitt 11 /1988 Method and apparatus for the deposition of solid films of a material from a jet stream entraining the gaseous phase of said material
US4838201 Fraas et al. 6 /1989 Apparatus and process for vacuum chemical epitaxy
US4878989 Purdes 11 /1989 Chemical beam epitaxy system
US4883770 Dohler et al. 11 /1989 Selective NIPI doping super lattice contacts and other semiconductor device structures formed by shadow masking fabrication
US4986216 Ohmori et al. 1 /1901 Semiconductor manufacturing apparatus
US5002630 Kermani et al. 3 /1991 Method for high temperature thermal processing with reduced convective heat loss
US5156820 Wong et al. 10 /1992 Reaction chamber with controlled radiant energy heating and distributed reactant flow
  * some details unavailable


           
CLAIMS:
[Hide claims]:		 What is claimed is:
    1. A system for controlling the thickness profile of deposited thin film layers over three-dimensional topography, comprising:
  • means for providing a gaseous reactant beam to product material deposition on a surface;
  • means for collimating said beam, such that the beam flux is directional rather than isotropic;
  • means for arranging a specific angle of incidence of said beam onto the surface;
  • means for providing a beam species such that the reaction probability of said beam with the surface is less than 100%;
  • means for producing a low pressure environment for said beam and said surface, such that beam directionality is maintained on a length scale up to and including the dimension between said collimating means and said surface where deposition is to take place.
    2. A system as in claim 1 wherein said collimating means causes the collimation of said beam to be approximately ±60° or less.
    3. A system as in claim 1 wherein said collimating means comprises means for passing said beam through a set of apertures designed to achieve directionality of the beam to produce collimation.
    4. A system as in claim 3 wherein said beam passing means comprises a set of nozzles.
    5. A system as in claim 1 wherein said means for providing a beam species comprises means for adding at least one of reactive species and inert carrier species to said beam.
    6. A system as in claim 1 wherein said means for providing a beam species provides beam species selected from the group consisting of silanes and chlorosilanes, organometallic and organosilicon species, metal fluorides, dopant precursors, known precursors for chemical vapor deposition, other volatile species, and combinations thereof.
    7. A system as in claim 1 wherein said beam species are selected from the group consisting of silane, higher silanes, chlorosilanes, B2 H6, PH3, AsH3, tetraethylorthosiloxane (commonly known as TEOS), WF6, TiCl4, NH3, N2, O2, O3, H2 O, and combinations thereof.
    8. A system as in claim 1 wherein said collimating means comprises means for directing said beam onto said surface with an angle of incidence of 0°.
    9. A system as in claim 1 wherein said collimating means comprises means for direction said beam onto said surface with an oblique angle of incidence between 0° and 90°.
    10. A system as in claim 1 wherein said means for producing a low pressure environment for said beam comprises means for producing a total pressure of less than or equal to 1 torr.
    11. A system as in claim 1 wherein said means for producing a low pressure environment for said beam comprises means for producing a total pressure in the range from about 0.1 millitorr to 500 millitorr.
    12. A system as in claim 1 wherein said means for producing a low pressure environment for said beam comprises means for producing a surface temperature in the range from room temperature to 1100° C.
    13. A system as in claim 1 wherein said means for producing a low pressure environment for said beam comprises means for producing a surface temperature in the range from about 250° to 750° C.
    14. A system as in claim 1 further comprising means for adding another gaseous species to said low pressure environment, to provide additional isotropic or directional impingement on said surface.
    15. A system as in claim 1 further comprising means for heating said collimating means.

Foreign References:
Publication NumberCountryDateIPC Class
JP06058653 Japan4 /1985  
JP63174310 Japan7 /1988  
JP00433329 Japan2 /1992  


Other References:
  • The LPCVD of silicon oxide films below 400° C. from liquid sources by Hochberg et al., in J. Elec Chem Soc 136(6), 1989, pp. 1843 1844.
  • A transmission electron microscopy study of low temperature reaction at the Co-Si interface by Ruterana in J. Appl. Phys 68(3), Aug. (1990), p. 1033.
  • M. L. Yu and B. N. Eldridge, "Supersonic Reactive Gas Jet Chemical Processing", IBM TDB, vol. 35, No. 2, Jul. 1992, pp. 402-403.


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