Dr. Gary W. Rubloff
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Process diagnostics, sensing, metrology, and control
Semiconductor manufacturing processes and equipment
Systems modeling, simulation, and optimization
Engineered learning systems

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All materials at this site are copyrighted 2003 by the University of Maryland
1996-2003, all rights reserved

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Semiconductor manufacturing processes and equipment
Process sensing, metrology, and control
Systems modeling, simulation, and optimization
Engineered learning systems
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Title Authors Journal Size (Kb)
Simulation-based design and experimental evaluation of a spatially controllable CVD reactor J.Choo, R. Adomaitis, G.W. Rubloff, L. Henn-Lecordier, Y. Liu AIChE, 51(2), 572-584 (Feb. 2005) 458
Real-time acoustic sensing and control of metalorganic CVD precursor concentrations delivered from solid-phase sources L. Henn-Lecordier, G. W. Rubloff, J. N.  Kidder J.  Vac. Sci. Technol., A 22(5), 1984-91 (Sept/Oct 2004) 205
ToF-SIMS studies of nanoporous PMSSQ materials: kinetics and reactions in the processing of low-K dielectrics for ULSI applications P. Lazzeri, G.W. Rubloff, L. Vanzetti, R.M. Briber, M. Bersani, J.J. Park, H.-C. Kim, W. Wolksen, R.D. Miller and Z. Lin Surface and Interface Analysis, 36, 304-310 (2004) 191
In-situ mass spectrometry in a 10 Torr W chemical vapor deposition process for film thickness metrology and real-time advanced process control S. Cho, L. Henn-Lecordier, Y. Liu, G. Rubloff J.  Vac. Sci. Technol., B 22(3), 880-87 (May/June 2004) 555
Real-time, in situ film thickness in a 10 Torr W chemical vapor deposition process using an acoustic sensor L. Henn-Lecordier, J. N. Kidder, G. W. Rubloff, C. Gogol, A. Wajid J. Vac. Sci. Technol., B 21(3), 1055-63 (May/June 2003) 249
Thickness metrology and end-point control in WCVD process with SiH4/WF6 using in situ mass spectrometry Y. Xu, T. Gougousi, L. Henn-Lecordier, Y. Liu, S. Cho, G.W. Rubloff J. Vac. Sci. Technol., B 20(6), 2351-2360 (Nov-Dec. 2002) 776
Real-time Growth rate metrology for a tungsten CVD process by acoustic sensing L. Henn-Lecordier, J. N. Kidder, G. W. Rubloff, C. Gogol, A. Wajid J. Vac. Sci. Technol., A 19(2), 621-626 (Mar-Apr. 2001) 114
Understanding the impact of equipment and process changes with a heterogeneous semiconductor manufacturing simulation environment J. W. Herrmann, B. F. Conaghan, L. Henn-Lecordier, P. Mellacheruvu, M.-Q. Nguyen, G. W. Rubloff, R. Z. Shi Proceeding of the 2000 Winter Simulation Conference, pp. 1491-1498, Orlando, Dec. 10-13, 2000 983
Influence of gas composition on wafer temperature control in a tungsten chemical vapor deposition reactor H.-Y. Chang, J.N. Kidder, G.W.Rubloff and R. A. Adomaitis J. Vac. Sci. Technol. B 19 (1), 230-238 (Jan.-Feb. 2001) and ISR TR 2000-9 1427
In-situ Sensing using Mass-Spectrometry and its use for Run-to-Run Control on a W CVD Cluster Tool T. Gougousi, R. Sreenivasan, Y. Xu, L. Henn-Lecordier, J.N. Kidder, Jr., G. W. Rubloff,, and E. Zafiriou Characterization and Metrology for ULSI Technology: 2000 International Conference, Gaithersburg, MD, 26-29 June 2000, AIP Conference Proceedings, Melville, NY, 2001, vol. 550, pp. 249-253. 47
Process Diagnostics and Thickness Metrology for the Chemical Vapor Deposition of W from H2/WF6 using in-situ mass-spectrometry T. Gougousi, Y. Xu, J.N. Kidder, Jr., G. W. Rubloff ,, and C. R. Tilford J. Vac. Sci. Technol. B 18, 1352-1363 (May/Jun 2000) 851
Evaluating the impact of process changes on cluster tool performance J. W. Herrmann, N. Chandrasekaran, B. F. Conaghan, M.-Q. Nguyen, G. W. Rubloff, R. Z. Shi IEEE Transactions on Semiconductor Manufacturing, Vol. 13, Number 2, pp. 181-192, 2000 and ISR T.R. 99-30 211
Process Sensing and Metrology in Gate Oxide Growth by Rapid Thermal Chemical Vapor Deposition using SiH4 and N2O G. Lu, L. Tedder and G. W. Rubloff J. Vac. Sci. Technol. B 17 (4), 1417-1423 (Jul/Aug 1999) 103
The Design of History Mechanism and their Use in Collaborative Educational Simulations C. Plaisant, A Rose, G. Rubloff, R. Salter, B. Schneiderman HCIL Technical Report No. 99-11 (May 1999) 397
An Application Framework for Creating Simulation-Based Learning Environments A. Rose, D. Eckard, G.W. Rubloff CS-TR-3907, UMIACS-TR-98-32 367
Integrated Dynamic Simulation of Rapid Thermal Chemical Vapor Deposition of Polysilicon G. Lu, M. Bora, L. L. Tedder, and G. W. Rubloff IEEE Trans. Semicond. Manuf. 11 (1), 63-74 (Feb., 1998)  
Contamination Control for Gas Delivery from a Liquid Source in Semiconductor Manufacturing G. Lu, G. W. Rubloff, and J. Durham IEEE Trans. Semicond. Manuf. 10 (4), 425-432 (Nov., 1997)  
Polysilicon RTCVD Process Optimization for Environmentally-Conscious Manufacturing G. Lu, M. Bora, and G. W. Rubloff IEEE Trans. Semicond. Manuf. 10 (3), 390-398 (August 1997)  
Real-time Process Sensing and Metrology in Amorphous and Selective Area Silicon PECVD Using In-Situ Mass Spectrometry A. I. Chowdhury, W. W. Read, G. N. Parsons, G. W. Rubloff, and L. L. Tedder J. Vac. Sci. Technol. B 15 (1), 127-132 (Jan/Feb 1997) 122
Education in Semiconductor Manufacturing Processes through Physically-Based Dynamic Simulation G.B. Lu, M. Oveissi, D. Eckard, and G.W. Rubloff Proc. 1996 Frontiers in Education Conference, Nov. 6-9, 1996, Salt Lake City, UT, and  ISR-TR-97-4 384
Dynamic Rate and Thickness Metrology during PolySi RTCVD from SiH4 using Real-Time In-Situ Mass Spectrometry L. L. Tedder, G. W. Rubloff, B. Conaghan, and G. N. Parsons J. Vac. Sci. Technol. A 14 (2), 267-270 (Mar/Apr 1996) 97
Role of Gas Phase Reactions in Sub-Atmospheric CVD Ozone/TEOS Processes for Oxide Deposition I. Shareef, G. W. Rubloff, and W. N. Gill J. Vac. Sci. Technol. B 14(2), 772-774 (Mar/Apr 1996)  
Real-Time Process and Product Diagnostics in RTCVD using In-Situ Mass Spectroscopic Sampling L. L. Tedder, G. W. Rubloff, I. Shareef, M. Anderle, D. H. Kim, and G. N. Parsons J. Vac. Sci. Technol. B 13 (4), 1924-27 (Jul/Aug 1995) 118
Real-Time Sensing and Dynamic Simulation for CVD Optimization and Control Gary W. Rubloff, Laura L. Tedder, and G. Brian Lu Proc. 13th Int. Conf. on Chemical Vapor Deposition (CVD-XIII), ECS Proc. Vol. 96-5, pp. 163-170, ISBN 1-56677-155-2    
Sub-Atmospheric CVD (SACVD) Ozone/TEOS Process for SiO2 Trench Filling I. A. Shareef, G. W. Rubloff, M. Anderle, W. N. Gill, J. Cotte, and D. H. Kim J. Vac. Sci. Technol. . B 13 (4), 1888-92 (Jul/Aug 1995)  
CVD Growth of Rough-Morphology Silicon Films over a Broad Temperature Range S. S. Dana, M. Anderle, G. W. Rubloff, and A. Acovic Appl. Phys. Lett. 63 (10), 1387-89 (6 Sept. 1993).  
Kinetics of Nucleation and Growth of Si on SiO2 in Very Low Pressure SiH4 Chemical Vapor Deposition S. S. Dana, M. Liehr, M. Anderle, and G. W. Rubloff Appl. Phys. Lett. 61 (25), 3035 (1992)  
Integrated Processing of MOS Gate Dielectric Structures G. W. Rubloff, M. Offenberg, and M. Liehr IEEE Transactions on Semiconductor Manufacturing 7 (1), 96-100 (Feb, 1994).  
Integrated Processing for Microelectronics Science and Technology G. W. Rubloff and D. T. Bordonaro IBM J. Res. Devel. 36 (2), 233-276 (1992)  
Defect Microchemistry in SiO2/Si Structures G. W. Rubloff J. Vac. Sci. Technol. A 8, 1857 (1990)  
Ultraclean, Integrated Processing of Thermal Oxide Structures M. Offenberg, M. Liehr, G. W. Rubloff, and K. Holloway Appl. Phys. Lett. 57, 1254 (1990)  
Chemical Interactions at Metal-Polymer Interfaces P. O. Hahn, G. W. Rubloff, J. W. Bartha, F. LeGoues, R. Tromp, and P. S. Ho Proceedings of Materials Research Society Symposium on Electronic Packaging Materials Science Boston, Nov. 27-29, 1984, Vol. 40, p. 251  
Chemical Bonding and Reaction at Polymer Surfaces and Metal/Polymer Interfaces P. S. Ho, P. O. Hahn, G. W. Rubloff, F. K. LeGoues, and D. Silverman J. Vac. Sci. Tech. A 3, 739 (1985)  
Chemical Bonding at the Polyimide Surface P. Hahn, G. W. Rubloff, and P. S. Ho J. Vac. Sci. Technol. A 2, 756 (1984)  
Low Temperature Material Reaction at the Ti/Si(111) Interface R. M. Tromp, G. W. Rubloff, and E. J. van Loenen J. Vac. Sci. Technol. A 4, 865 (1986)  
Chemical Bonding and Reactions at Ti/Si and Ti/oxygen/Si Interfaces R. Butz, G. W. Rubloff, and P. S. Ho J. Vac. Sci. Technol. A 1, 771 (1983)  
Electronic Structure of the Silicide/Si Interface G. W. Rubloff and P. S. Ho Thin Solid Films 93, 21 (1982)  
Microscopic Compound Formation at the Pd/Si(111) Interface J. L. Freeouf, G. W. Rubloff, P. S. Ho, and T. S. Kuan Phys. Rev. Lett. 43, 1836 (1979)