| Title |
Authors |
Journal |
Size
(Kb) |
|
Simulation-based
design and experimental evaluation of a spatially controllable CVD
reactor |
J.Choo, R. Adomaitis, G.W. Rubloff, L.
Henn-Lecordier, Y. Liu |
AIChE, 51(2), 572-584 (Feb. 2005) |
458 |
|
Real-time acoustic sensing and control of metalorganic CVD precursor
concentrations delivered from solid-phase sources |
L. Henn-Lecordier, G. W. Rubloff, J. N.
Kidder |
J. Vac. Sci. Technol., A 22(5),
1984-91 (Sept/Oct 2004) |
205 |
|
ToF-SIMS
studies of nanoporous PMSSQ materials: kinetics and reactions in the
processing of low-K dielectrics for ULSI applications |
P. Lazzeri, G.W. Rubloff, L. Vanzetti, R.M.
Briber, M. Bersani, J.J. Park, H.-C. Kim, W. Wolksen, R.D. Miller and Z.
Lin |
Surface and Interface Analysis, 36, 304-310
(2004) |
191 |
|
In-situ mass
spectrometry in a 10 Torr W chemical vapor deposition process for film
thickness metrology and real-time advanced process control |
S. Cho, L. Henn-Lecordier, Y. Liu, G.
Rubloff |
J. Vac. Sci. Technol., B 22(3), 880-87
(May/June 2004) |
555 |
|
Real-time, in situ film thickness in a 10 Torr W chemical vapor
deposition process using an acoustic sensor |
L.
Henn-Lecordier, J. N. Kidder, G. W. Rubloff, C. Gogol, A. Wajid |
J. Vac. Sci.
Technol., B 21(3), 1055-63 (May/June 2003) |
249 |
|
Thickness metrology and end-point control in WCVD process with SiH4/WF6
using in situ mass spectrometry |
Y. Xu, T. Gougousi, L. Henn-Lecordier, Y.
Liu, S. Cho, G.W. Rubloff |
J. Vac. Sci.
Technol., B 20(6), 2351-2360 (Nov-Dec. 2002) |
776 |
|
Real-time
Growth rate metrology for a tungsten CVD process by acoustic sensing |
L.
Henn-Lecordier, J. N. Kidder, G. W. Rubloff, C. Gogol, A. Wajid |
J. Vac. Sci.
Technol., A 19(2), 621-626 (Mar-Apr. 2001) |
114 |
|
Understanding
the impact of equipment and process changes with a heterogeneous
semiconductor manufacturing simulation environment |
J. W. Herrmann, B. F.
Conaghan,
L. Henn-Lecordier, P. Mellacheruvu, M.-Q. Nguyen, G. W. Rubloff, R. Z. Shi |
Proceeding
of the 2000 Winter Simulation Conference, pp. 1491-1498, Orlando, Dec.
10-13, 2000 |
983 |
|
Influence
of gas composition on wafer temperature control in a tungsten chemical
vapor deposition reactor |
H.-Y.
Chang, J.N. Kidder, G.W.Rubloff and R. A. Adomaitis |
J. Vac. Sci.
Technol. B 19 (1), 230-238 (Jan.-Feb. 2001) and ISR TR 2000-9 |
1427 |
|
In-situ
Sensing using Mass-Spectrometry and its use for Run-to-Run Control on
a W CVD Cluster Tool |
T. Gougousi, R. Sreenivasan, Y. Xu, L.
Henn-Lecordier, J.N. Kidder, Jr., G. W. Rubloff,,
and E. Zafiriou |
Characterization and Metrology
for ULSI Technology: 2000 International Conference, Gaithersburg, MD,
26-29 June 2000, AIP Conference Proceedings, Melville, NY, 2001, vol.
550, pp. 249-253. |
47 |
|
Process
Diagnostics and Thickness Metrology for the Chemical Vapor Deposition
of W from H2/WF6 using in-situ mass-spectrometry |
T.
Gougousi, Y. Xu, J.N. Kidder, Jr., G. W. Rubloff ,, and C. R. Tilford |
J.
Vac. Sci. Technol. B 18, 1352-1363 (May/Jun 2000) |
851 |
|
Evaluating
the impact of process changes on cluster tool performance |
J.
W. Herrmann, N. Chandrasekaran, B. F. Conaghan, M.-Q. Nguyen, G. W.
Rubloff, R. Z. Shi |
IEEE
Transactions on Semiconductor Manufacturing, Vol. 13, Number 2, pp.
181-192, 2000 and ISR T.R. 99-30 |
211 |
|
Process
Sensing and Metrology in Gate Oxide Growth by Rapid Thermal Chemical
Vapor Deposition using SiH4 and N2O |
G.
Lu, L. Tedder and G. W. Rubloff |
J.
Vac. Sci. Technol. B 17 (4), 1417-1423 (Jul/Aug 1999) |
103 |
|
The
Design of History Mechanism and their Use in Collaborative Educational
Simulations |
C.
Plaisant, A Rose, G. Rubloff, R. Salter, B. Schneiderman |
HCIL
Technical Report No. 99-11 (May 1999) |
397 |
|
An
Application Framework for Creating Simulation-Based Learning
Environments |
A.
Rose, D. Eckard, G.W. Rubloff |
CS-TR-3907,
UMIACS-TR-98-32 |
367 |
|
Integrated
Dynamic Simulation of Rapid Thermal Chemical Vapor Deposition of
Polysilicon |
G.
Lu, M. Bora, L. L. Tedder, and G. W. Rubloff |
IEEE
Trans. Semicond. Manuf. 11 (1), 63-74 (Feb., 1998) |
|
|
Contamination
Control for Gas Delivery from a Liquid Source in Semiconductor
Manufacturing |
G.
Lu, G. W. Rubloff, and J. Durham |
IEEE
Trans. Semicond. Manuf. 10 (4), 425-432 (Nov., 1997) |
|
|
Polysilicon
RTCVD Process Optimization for Environmentally-Conscious Manufacturing |
G.
Lu, M. Bora, and G. W. Rubloff |
IEEE
Trans. Semicond. Manuf. 10 (3), 390-398 (August 1997) |
|
|
Real-time
Process Sensing and Metrology in Amorphous and Selective Area Silicon
PECVD Using In-Situ Mass Spectrometry |
A.
I. Chowdhury, W. W. Read, G. N. Parsons, G. W. Rubloff, and L. L.
Tedder |
J.
Vac. Sci. Technol. B 15 (1), 127-132 (Jan/Feb 1997) |
122 |
|
Education
in Semiconductor Manufacturing Processes through Physically-Based
Dynamic Simulation |
G.B.
Lu, M. Oveissi, D. Eckard, and G.W. Rubloff |
Proc.
1996 Frontiers in Education Conference, Nov. 6-9, 1996, Salt Lake
City, UT, and ISR-TR-97-4 |
384 |
|
Dynamic
Rate and Thickness Metrology during PolySi RTCVD from SiH4 using
Real-Time In-Situ Mass Spectrometry |
L.
L. Tedder, G. W. Rubloff, B. Conaghan, and G. N. Parsons |
J.
Vac. Sci. Technol. A 14 (2), 267-270 (Mar/Apr 1996) |
97 |
|
Role
of Gas Phase Reactions in Sub-Atmospheric CVD Ozone/TEOS Processes for
Oxide Deposition |
I.
Shareef, G. W. Rubloff, and W. N. Gill |
J.
Vac. Sci. Technol. B 14(2), 772-774 (Mar/Apr 1996) |
|
|
Real-Time
Process and Product Diagnostics in RTCVD using In-Situ Mass
Spectroscopic Sampling |
L.
L. Tedder, G. W. Rubloff, I. Shareef, M. Anderle, D. H. Kim, and G. N.
Parsons |
J.
Vac. Sci. Technol. B 13 (4), 1924-27 (Jul/Aug 1995) |
118 |
|
Real-Time
Sensing and Dynamic Simulation for CVD Optimization and Control |
Gary
W. Rubloff, Laura L. Tedder, and G. Brian Lu |
Proc.
13th Int. Conf. on Chemical Vapor Deposition (CVD-XIII), ECS Proc.
Vol. 96-5, pp. 163-170, ISBN 1-56677-155-2 |
|
|
Sub-Atmospheric
CVD (SACVD) Ozone/TEOS Process for SiO2 Trench Filling |
I.
A. Shareef, G. W. Rubloff, M. Anderle, W. N. Gill, J. Cotte, and D. H.
Kim |
J.
Vac. Sci. Technol. . B 13 (4), 1888-92 (Jul/Aug 1995) |
|
|
CVD
Growth of Rough-Morphology Silicon Films over a Broad Temperature
Range |
S.
S. Dana, M. Anderle, G. W. Rubloff, and A. Acovic |
Appl.
Phys. Lett. 63 (10), 1387-89 (6 Sept. 1993). |
|
|
Kinetics
of Nucleation and Growth of Si on SiO2 in Very Low Pressure SiH4
Chemical Vapor Deposition |
S.
S. Dana, M. Liehr, M. Anderle, and G. W. Rubloff |
Appl.
Phys. Lett. 61 (25), 3035 (1992) |
|
|
Integrated
Processing of MOS Gate Dielectric Structures |
G.
W. Rubloff, M. Offenberg, and M. Liehr |
IEEE
Transactions on Semiconductor Manufacturing 7 (1), 96-100 (Feb, 1994). |
|
|
Integrated
Processing for Microelectronics Science and Technology |
G.
W. Rubloff and D. T. Bordonaro |
IBM
J. Res. Devel. 36 (2), 233-276 (1992) |
|
|
Defect
Microchemistry in SiO2/Si Structures |
G.
W. Rubloff |
J.
Vac. Sci. Technol. A 8, 1857 (1990) |
|
|
Ultraclean,
Integrated Processing of Thermal Oxide Structures |
M.
Offenberg, M. Liehr, G. W. Rubloff, and K. Holloway |
Appl.
Phys. Lett. 57, 1254 (1990) |
|
|
Chemical
Interactions at Metal-Polymer Interfaces |
P.
O. Hahn, G. W. Rubloff, J. W. Bartha, F. LeGoues, R. Tromp, and P. S.
Ho |
Proceedings
of Materials Research Society Symposium on Electronic Packaging
Materials Science Boston, Nov. 27-29, 1984, Vol. 40, p. 251 |
|
|
Chemical
Bonding and Reaction at Polymer Surfaces and Metal/Polymer Interfaces |
P.
S. Ho, P. O. Hahn, G. W. Rubloff, F. K. LeGoues, and D. Silverman |
J.
Vac. Sci. Tech. A 3, 739 (1985) |
|
|
Chemical
Bonding at the Polyimide Surface |
P.
Hahn, G. W. Rubloff, and P. S. Ho |
J.
Vac. Sci. Technol. A 2, 756 (1984) |
|
|
Low
Temperature Material Reaction at the Ti/Si(111) Interface |
R.
M. Tromp, G. W. Rubloff, and E. J. van Loenen |
J.
Vac. Sci. Technol. A 4, 865 (1986) |
|
|
Chemical
Bonding and Reactions at Ti/Si and Ti/oxygen/Si Interfaces |
R.
Butz, G. W. Rubloff, and P. S. Ho |
J.
Vac. Sci. Technol. A 1, 771 (1983) |
|
|
Electronic
Structure of the Silicide/Si Interface |
G.
W. Rubloff and P. S. Ho |
Thin
Solid Films 93, 21 (1982) |
|
|
Microscopic
Compound Formation at the Pd/Si(111) Interface |
J.
L. Freeouf, G. W. Rubloff, P. S. Ho, and T. S. Kuan |
Phys.
Rev. Lett. 43, 1836 (1979) |
|
